PB12CN10N G
Payment:
Delivery:

PB12CN10N G , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPB12CN10N G
Package:
RoHS:
Datasheet:

PDF For IPB12CN10N G

ECAD:
Description:
MOSFET N-CH 100V 67A D2PAK
Request for Quotation In Stock: 494152
Warm Tips: Please fill out the below form and we will contact you as soon as possible.
*Quantity:
*Your Name:
*Email Address:
Phone:
Target Price:
Remark:
Send Inquiry
  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Drain To Source Voltage (Vdss) 100 V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 67A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4320 pF @ 50 V
Power Dissipation (Max) 125W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Related Products
11949389
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11949389&N=
$